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DMN80H2D0SCTIN-Channel 800 V 7A (Tc) 41W (Tc) Through Hole ITO-220AB

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ABRmicro #.ABR2045-DMN80H-706555
ManufacturerDiodes Incorporated
MPN #.DMN80H2D0SCTI
Estimated Lead Time-
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In Stock: 79
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 8, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberDMN80
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35.4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1253 pF @ 25 V
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation41W (Tc)
RDS(on) Drain-to-Source On Resistance2Ohm @ 2.5A, 10V
Package Type (Mfr.)ITO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack, Isolated Tab
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Diodes Environmental Compliance Cert
PCN Assembly/Origin
Mult Dev Site Chg 6/Aug/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)