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DMN62D0LFD-13N-Channel 60 V 310mA (Ta) 480mW (Ta) Surface Mount X1-DFN1212-3

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ABRmicro #.ABR2045-DMN62D-744338
ManufacturerDiodes Incorporated
MPN #.DMN62D0LFD-13
Estimated Lead Time-
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In Stock: 66
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 8, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberDMN62
Continuous Drain Current (ID) @ 25°C310mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)0.5 nC @ 4.5 V
Grade-
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)31 pF @ 25 V
MfrDiodes Incorporated
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation480mW (Ta)
Qualification-
RDS(on) Drain-to-Source On Resistance2Ohm @ 100mA, 4V
Package Type (Mfr.)X1-DFN1212-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case3-UDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Diodes Environmental Compliance Cert
PCN Obsolescence/ EOL
Mult Devices EOL 05/Feb/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)