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DMN10H170SFDE-13N-Channel 100 V 2.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
1:$0.1180
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-DMN10H-718638
ManufacturerDiodes Incorporated
MPN #.DMN10H170SFDE-13
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetDMN10H170SFDE(PDF)
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In Stock: 105
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.1180
Ext. Price$ 0.1180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
10000$0.1180$1180.0000
30000$0.1160$3480.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 90 V 10mA (Ta) 625mW (Ta) Through Hole E-Line (TO-92 compatible) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberDMN10
Continuous Drain Current (ID) @ 25°C2.9A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1167 pF @ 25 V
MfrDiodes Incorporated
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation660mW (Ta)
RDS(on) Drain-to-Source On Resistance160mOhm @ 5A, 10V
Package Type (Mfr.)U-DFN2020-6 (Type E)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case6-PowerUDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)