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DMJ70H1D4SV3N-Channel 700 V 5A (Tc) 78W (Tc) Through Hole TO-251 (Type TH3)

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ABRmicro #.ABR2045-DMJ70H-696375
ManufacturerDiodes Incorporated
MPN #.DMJ70H1D4SV3
Estimated Lead Time-
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DatasheetDatasheetDMJ70H1D4SV3(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberDMJ70
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)342 pF @ 50 V
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation78W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 1A, 10V
Package Type (Mfr.)TO-251 (Type TH3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Stub Leads, IPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
DMJ70H1D4SV3
Environmental Information
Diodes Environmental Compliance Cert
PCN Obsolescence/ EOL
Mult Devices EOL 05/Feb/2019
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)