ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
DMJ70H1D3SJ3N-Channel 700 V 4.6A (Tc) 41W (Tc) Through Hole TO-251

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-DMJ70H-705797
ManufacturerDiodes Incorporated
MPN #.DMJ70H1D3SJ3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetDMJ70H1D3SJ3(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 138
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
ADTA114EUAQ-7$0.1610
Diodes Incorporated
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 330 mW Surface Mount SOT-323
DDTC144GKA-7-FN/A
Diodes Incorporated
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
DDTC144VKA-7-FN/A
Diodes Incorporated
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
DMN2075UDW-7$0.3300
Diodes Incorporated
N-Channel 20 V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363
ZDT1048TA$1.2560
Diodes Incorporated
Bipolar (BJT) Transistor Array 2 NPN (Dual) 17.5V 5A 150MHz 2.75W Surface Mount SM8
ZDT717TAN/A
Diodes Incorporated
Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 2.5A 110MHz 2.5W Surface Mount SM8
ZVN1409ASTOAN/A
Diodes Incorporated
N-Channel 90 V 10mA (Ta) 625mW (Ta) Through Hole E-Line (TO-92 compatible)
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberDMJ70
Continuous Drain Current (ID) @ 25°C4.6A (Tc)
Drain-to-Source Voltage (VDS)700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)351 pF @ 50 V
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 155°C (TJ)
Maximum Power Dissipation41W (Tc)
RDS(on) Drain-to-Source On Resistance1.3Ohm @ 2.5A, 10V
Package Type (Mfr.)TO-251
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
DMJ70H1D3SJ3
Environmental Information
Diodes Environmental Compliance Cert
PCN Assembly/Origin
Mult Dev Site Chg 6/Aug/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)