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DMG7N65SCTN-Channel 650 V 7.7A (Tc) 125W (Tc) Through Hole TO-220AB (Type TH)

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ABRmicro #.ABR2045-DMG7N6-780349
ManufacturerDiodes Incorporated
MPN #.DMG7N65SCT
Estimated Lead Time-
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 9, 2024
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Technical Specifications
SeriesAutomotive, AEC-Q101
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberDMG7N65
Continuous Drain Current (ID) @ 25°C7.7A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)886 pF @ 50 V
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 2.5A, 10V
Package Type (Mfr.)TO-220AB (Type TH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental Information
Diodes Environmental Compliance Cert
PCN Assembly/Origin
Mult Dev Site Chg 6/Aug/2020
PCN Obsolescence/ EOL
Mult Dev EOL 2/Sep/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)