Image is for reference only, the actual product serves as the standard.
DMG2305UX-13P-Channel 20 V 4.2A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
1:$0.3050
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-DMG230-724108
ManufacturerDiodes Incorporated
MPN #.DMG2305UX-13
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetDMG2305UX(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 273778
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.3050
Ext. Price$ 0.3050
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3050$0.3050
10$0.2110$2.1100
100$0.1020$10.2000
500$0.0860$43.0000
1000$0.0590$59.0000
2000$0.0520$104.0000
5000$0.0480$240.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
ADTA114EUAQ-7$0.1610
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 330 mW Surface Mount SOT-323Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
ZDT1048TA$1.2560
Bipolar (BJT) Transistor Array 2 NPN (Dual) 17.5V 5A 150MHz 2.75W Surface Mount SM8ZDT717TAN/A
Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 2.5A 110MHz 2.5W Surface Mount SM8ZVN1409ASTOAN/A
N-Channel 90 V 10mA (Ta) 625mW (Ta) Through Hole E-Line (TO-92 compatible) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberDMG2305
Continuous Drain Current (ID) @ 25°C4.2A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)10.2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)808 pF @ 15 V
MfrDiodes Incorporated
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.4W (Ta)
RDS(on) Drain-to-Source On Resistance52mOhm @ 4.2A, 4.5V
Package Type (Mfr.)SOT-23-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)900mV @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)