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APT13005DT-G1Bipolar (BJT) Transistor NPN 450 V 4 A 4MHz 75 W Through Hole TO-220-3

N/A

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ABRmicro #.ABR2045-APT130-780424
ManufacturerDiodes Incorporated
MPN #.APT13005DT-G1
Estimated Lead Time-
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DatasheetDatasheetAPT13005D(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Box
Shipping DateNovember 6, 2024
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Technical Specifications
Series-
Packaging
Box
Lifecycle StatusObsolete
Base Product NumberAPT13005
Collector Current (Iᴄ)@25°C4 A
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 2A, 5V
Frequency - Transition4MHz
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max75 W
Package Type (Mfr.)TO-220-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic900mV @ 1A, 4A
Collector-Emitter Breakdown Voltage (Max.)450 V
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
APT13005D
Environmental Information
Diodes Environmental Compliance Cert
PCN Obsolescence/ EOL
Mult Dev EOL 15/Mar/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)