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APT13003LZTR-G1Bipolar (BJT) Transistor NPN 450 V 800 mA 800 mW Through Hole TO-92

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ABRmicro #.ABR2045-APT130-787168
ManufacturerDiodes Incorporated
MPN #.APT13003LZTR-G1
Estimated Lead Time-
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Box (TB)
Shipping DateNovember 6, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product NumberAPT13003
Collector Current (Iᴄ)@25°C800 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 300mA, 10V
Frequency - Transition-
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max800 mW
Package Type (Mfr.)TO-92
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 40mA, 200mA
Collector-Emitter Breakdown Voltage (Max.)450 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Diodes Environmental Compliance Cert
PCN Obsolescence/ EOL
Mult Dev EOL 15/Mar/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)