ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
APT13003HU-G1Bipolar (BJT) Transistor NPN 465 V 1.5 A 4MHz 20 W Through Hole TO-126

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-APT130-751490
ManufacturerDiodes Incorporated
MPN #.APT13003HU-G1
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 6, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
ADTA114EUAQ-7$0.1610
Diodes Incorporated
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 330 mW Surface Mount SOT-323
DDTC144GKA-7-FN/A
Diodes Incorporated
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
DDTC144VKA-7-FN/A
Diodes Incorporated
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
DMN2075UDW-7$0.3300
Diodes Incorporated
N-Channel 20 V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363
ZDT1048TA$1.2560
Diodes Incorporated
Bipolar (BJT) Transistor Array 2 NPN (Dual) 17.5V 5A 150MHz 2.75W Surface Mount SM8
ZDT717TAN/A
Diodes Incorporated
Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 2.5A 110MHz 2.5W Surface Mount SM8
ZVN1409ASTOAN/A
Diodes Incorporated
N-Channel 90 V 10mA (Ta) 625mW (Ta) Through Hole E-Line (TO-92 compatible)
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberAPT13003
Collector Current (Iᴄ)@25°C1.5 A
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce13 @ 500mA, 2V
Frequency - Transition4MHz
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max20 W
Package Type (Mfr.)TO-126
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400mV @ 250mA, 1A
Collector-Emitter Breakdown Voltage (Max.)465 V
Package / CaseTO-225AA, TO-126-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental Information
Diodes Environmental Compliance Cert
PCN Design/Specification
APT13003 Material Chg 11/Jun/2019
PCN Obsolescence/ EOL
Mult Dev EOL Rev 7/Apr/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)