CMSP2011A6-HFP-Channel 20 V 11A (Ta) 750mW (Ta) Surface Mount DFNWB2x2-6L-J
1:$0.1900
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CMSP20-2450083
ManufacturerComchip Technology
MPN #.CMSP2011A6-HF
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
CMSP2011A6-HF(PDF)
CMSP2011A6-HF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 0.1900
Ext. Price$ 0.1900
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.1900$570.0000
6000$0.1790$1074.0000
9000$0.1660$1494.0000
30000$0.1640$4920.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor PNP 40 V 200 mA 300MHz 200 mW Surface Mount SOT-23-3 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C11A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1580 pF @ 6 V
MfrComchip Technology
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation750mW (Ta)
RDS(on) Drain-to-Source On Resistance24mOhm @ 7.2A, 4.5V
Package Type (Mfr.)DFNWB2x2-6L-J
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case6-WDFN Exposed Pad
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)