CMS45N10H8-HFN-Channel 100 V 45A (Tc) 94.7W (Tc) Surface Mount P-PAK (5x6)
1:$0.9900
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ABRmicro #.ABR2045-CMS45N-2183421
ManufacturerComchip Technology
MPN #.CMS45N10H8-HF
Estimated Lead Time12 Weeks
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Datasheet
CMS45N10H8-HF(PDF)
CMS45N10H8-HF(PDF)
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Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 0.9900
Ext. Price$ 0.9900
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9900$0.9900
10$0.8080$8.0800
100$0.6280$62.8000
3000$0.4090$1227.0000
6000$0.3880$2328.0000
12000$0.3710$4452.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor PNP 40 V 200 mA 300MHz 200 mW Surface Mount SOT-23-3 Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C45A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1003.9 pF @ 50 V
MfrComchip Technology
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation94.7W (Tc)
RDS(on) Drain-to-Source On Resistance20mOhm @ 10A, 10V
Package Type (Mfr.)P-PAK (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)