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CMS42N10H8-HFN-Channel 100 V 6.6A (Ta) 3.6W (Ta), 83.3W (Tc) Surface Mount DFN5x6 (PR-PAK)

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ABRmicro #.ABR2045-CMS42N-2114220
ManufacturerComchip Technology
MPN #.CMS42N10H8-HF
Estimated Lead Time-
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In Stock: 15
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Min.&Mult.1
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Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C6.6A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1325 pF @ 30 V
MfrComchip Technology
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.6W (Ta), 83.3W (Tc)
RDS(on) Drain-to-Source On Resistance60mOhm @ 3.2A, 10V
Package Type (Mfr.)DFN5x6 (PR-PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)