ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
CMS13N06H8-HFN-Channel 60 V 56A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-DFN (5x6)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CMS13N-2440210
ManufacturerComchip Technology
MPN #.CMS13N06H8-HF
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetCMS13N06H8-HF(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 144
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 5, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
2N3906-G$0.2660
Comchip Technology
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz Through Hole TO-92
BC856B-HF$0.0340
Comchip Technology
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 250 mW Surface Mount SOT-23-3
BC858AW-G$0.0350
Comchip Technology
Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 150 mW Surface Mount SOT-323
CJ3139KDW-G$0.3210
Comchip Technology
Mosfet Array 20V 660mA (Ta) 150mW Surface Mount SOT-363
CMS45P03H8-HFN/A
Comchip Technology
P-Channel 30 V 9.6A (Ta), 45A (Tc) 2W (Ta), 45W (Tc) Surface Mount DFN5x6 (PR-PAK)
FMMT619-G$0.2410
Comchip Technology
Bipolar (BJT) Transistor NPN 50 V 2 A 100MHz 350 mW Surface Mount SOT-23-3
MMBT3906-G$0.1210
Comchip Technology
Bipolar (BJT) Transistor PNP 40 V 200 mA 300MHz 200 mW Surface Mount SOT-23-3
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C56A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1619 pF @ 25 V
MfrComchip Technology
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 83W (Tc)
RDS(on) Drain-to-Source On Resistance6.4mOhm @ 25A, 10V
Package Type (Mfr.)8-DFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.6V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
CMS13N06H8-HF
Environmental Information
Comchip Technology RoHS Cert
Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)