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CGD65B200S2-T13650 V 8.5A (Tc) Surface Mount 8-DFN (5x6)

1:$3.6600

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CGD65B-2184623
ManufacturerCambridge GaN Devices
MPN #.CGD65B200S2-T13
Estimated Lead Time26 Weeks
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DatasheetDatasheetCGD65B200S2(PDF)
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In Stock: 2959
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 3.6600
Ext. Price$ 3.6600
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.6600$3.6600
10$3.0730$30.7300
100$2.4870$248.7000
500$2.2100$1105.0000
1000$1.8930$1893.0000
2000$1.7820$3564.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesICeGaN™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C8.5A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))9V, 20V
FET FeatureCurrent Sensing
FET Type-
Gate Charge Total (Qg)(Max.)1.4 nC @ 12 V
MfrCambridge GaN Devices
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
RDS(on) Drain-to-Source On Resistance280mOhm @ 600mA, 12V
Package Type (Mfr.)8-DFN (5x6)
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)+20V, -1V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.2V @ 2.75mA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
CGD65B200S2
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)