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AS1M040120TN-Channel 1200 V 60A (Tc) 330W (Tc) Through Hole TO-247-4

1:$16.6630

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-AS1M04-2211806
ManufacturerAnbon Semiconductor
MPN #.AS1M040120T
Estimated Lead Time4 Weeks
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DatasheetDatasheetAS1M040120T(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 16.6630
Ext. Price$ 16.6630
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$16.6630$16.6630
10$14.8080$148.0800
100$12.9520$1295.2000
500$11.0520$5526.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C60A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)142 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2946 pF @ 1000 V
MfrANBON SEMICONDUCTOR (INT'L) LIMITED
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation330W (Tc)
RDS(on) Drain-to-Source On Resistance55mOhm @ 40A, 20V
Package Type (Mfr.)TO-247-4
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+25V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 10mA
Package / CaseTO-247-4
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
AS1M040120T
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)