ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
N02L83W2AT25ISRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 32-TSOP I

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2020-N02L83-1212335
ManufacturerAMI Semiconductor
MPN #.N02L83W2AT25I
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetN02L83W2AT25I(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 218
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateNovember 3, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
N02L63W3AB25ITN/A
AMI Semiconductor
SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 48-BGA (6x8)
N04L63W2AB27IN/A
AMI Semiconductor
SRAM - Asynchronous Memory IC 4Mbit Parallel 70 ns 48-BGA (6x8)
Technical Specifications
Series-
Packaging
Tray
Lifecycle StatusObsolete
Access Time55 ns
Base Product NumberN02L83
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization256K x 8
Memory Size2Mbit
Memory TypeVolatile
MfrAMI Semiconductor Inc.
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)32-TSOP I
TechnologySRAM - Asynchronous
Supply Voltage2.3V ~ 3.6V
Write Cycle Time (Twc)55ns
Package / Case32-LFSOP (0.724", 18.40mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
N02L83W2AT25I
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCN3A991B2A AT
HTSUS8542.32.0041 (Static read-write random access (SRAM); No import duty applies)